[7p-P01-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[7p-P01-2] Numerical Analysis of Basic Characteristics of Capacitively-coupled RF CO Plasma for Hydrogen-Free DLC Films Deposition

〇(M2)Tatsuya Takiguchi¹, Toru Harigai², Hiroyuki Kousaka², Akinori Oda¹ (1.Chiba Tech., 2.Gifu Univ.)

Keywords:

diamond-like carbon,plasma CVD,simulation

The deposition of hydrogen-free diamond-like carbon (DLC) films can be accomplished through plasma-enhanced chemical vapor deposition (PECVD) using carbon monoxide (CO) gas as a carbon source. However, despite the absence of hydrogen in DLC films derived from CO gas, these films often exhibit an incorporation of oxygen, thereby constraining the enhancement of film hardness. To approach this issue, the present study focuses on radio-frequency (RF) PECVD using a CO gas , with the aims of developing a deposition process for hydrogen-free DLC films with higher hardness. In this article, a one-dimensional fluid model of capacitively-coupled RF CO plasmas was developed and simulated.