Presentation Information
[7p-P03-11]Magnetovolume effect of quaternary Heusler alloy CoFeCrAl
〇Iduru Shigeta1, Soichiro Tsujikawa1, Jun Gouchi2, Rie Y. Umetsu3, Takeshi Kanomata4, Yoshiya Uwatoko2, Masahiko Hiroi1 (1.Kagoshima Univ., 2.Univ. of Tokyo, 3.Tohoku Univ., 4.Tohoku Gakuin Univ.)
Keywords:
spin-gapless semiconductor,Heusler alloy,magnetovolume effect
We have investigated the pressure effect on the magnetic properties of quaternary Heusler alloy CoFeCrAl, which is expected to be a spin-gapless semiconductor. In the magnetization curve M(H) at 10 K, the spontaneous magnetization Ms under ambient pressure was estimated to be 2.01 μB/f.u. The magnetic moment follows the Slater-Pauling rule. Furthermore, the pressure dependence of M(H) exhibits that Ms is independent of pressure. These results suggest that CoFeCrAl is one of functional materials with high spin polarization due to the existence of a gap at the Fermi energy in the density of states of the down-spin band of CoFeCrAl.