Presentation Information
[7p-S202-10]Study on the Gate Length Dependence of InGaAs-HEMT Device Operation Using Extended Free Energy Model
〇Haruto Nakamura1, Yotaro Machida2, Ryunosuke Nagaoka2, Issei Watanabe3, Masato Kotugi2, Hirokazu Fukidome1 (1.Tohoku Univ., 2.TUS, 3.NICT)
Keywords:
semiconductor