Presentation Information

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[7p-S203-16]Effect of off-angle of the SiC substrate in graphene growth by polymer-assisted sublimation growth

〇(M2)Takuto Nishina¹, Wataru Norimatsu¹ (1.Waseda Univ.)

Keywords:

graphene,step bunching,morphology

When a polymer is applied to a SiC(0001) substrate and then heated, graphene is formed using the polymer as a carbon source. This method is called the polymer-assisted sublimation growth (PASG) method, and it is possible to form graphene with suppressed step-bunching. However, there have been no reports of graphene formation by the PASG method on SiC substrates with an off-axis angle. In this study, we investigated the effects of the off-axis angle and polymer concentration on graphene formation by the PASG method.

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