Session Details
[7p-S203-14~17]17.2 Graphene
Sun. Sep 7, 2025 4:45 PM - 5:45 PM JST
Sun. Sep 7, 2025 7:45 AM - 8:45 AM UTC
Sun. Sep 7, 2025 7:45 AM - 8:45 AM UTC
S203 (Lecture Hall South)
[7p-S203-14]Formation of 2D Iron Oxide at the Graphene/SiC(0001) Interface
〇Ryotaro Sakakibara1,2, Tomo-o Terasawa3,4, Taizo Kawauchi4, Katsuyuki Fukutani3,4, Takahiro Ito5, Wataru Norimatsu6 (1.NIMS, 2.Tokyo Metro. Univ., 3.JAEA, 4.Univ. of Tokyo, 5.Nagoya Univ., 6.Waseda Univ.)
[7p-S203-15]The effect of buffer layer on step bunching during graphene growth
〇Keiju Sato1, Takuji Maekawa1, Yoshiaki Oku1, Ken Nakahara1, Wataru Norimatsu2 (1.ROHM Co., Ltd., 2.Waseda Univ.)
[7p-S203-16]Effect of off-angle of the SiC substrate in graphene growth by polymer-assisted sublimation growth
〇(M2)Takuto Nishina1, Wataru Norimatsu1 (1.Waseda Univ.)
[7p-S203-17]Graphene CVD Growth Using Real-time Observation and Bayesian Optimization
〇Yui Ogawa1, Yuki Wakabayashi1, Takuma Otsuka2, Yoshitaka Taniyasu1 (1.NTT BRL, 2.NTT CSL)