[8a-N206-1~12] 6.6 Probe Microscopy

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[8a-N206-11] Temperature-controlled local CV profiling of SiO₂/SiC by time-resolved scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Yasuo Cho² (1.RIEC, Tohoku Univ., 2.NICHe, Tohoku Univ.)

Keywords:

semiconductor,scanning nonlinear dielectric microscopy,SNDM

To evaluate deep interface defect levels in wide-bandgap semiconductors, we implemented local capacitance-voltage (CV) profiling under high-temperature conditions using time-resolved scanning nonlinear dielectric microscopy (SNDM). This technique was applied to a thermally oxidized SiO₂/SiC wafer with measurements conducted over a temperature range from room temperature to 523 K. The results revealed that spatial fluctuations in the local CV profiles within the depletion region exhibited weak temperature dependence, suggesting that these fluctuations originate from deep defect levels.