[8a-N206-1~12] 6.6 Probe Microscopy

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N206-2] Local CV profiling of mechanically exfoliated WSe₂ using light-assisted scanning nonlinear dielectric microscopy

〇(M1)Akihiro Isaka^1,2, Nobuhide Yokota³, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ., 3.Shizuoka Univ.)

Keywords:

scanning nonlinear dielectric microscopy,scanning probe microscope,semiconductor

Scanning nonlinear dielectric microscopy (SNDM) enables the nanoscale observation of majority carrier distributions and interface defect densities in semiconductor materials. By integrating light irradiation capability into SNDM, it becomes possible to visualize photoresponse characteristics and interface defects with deep energy levels. In this study, we developed light-assisted SNDM incorporating a light irradiation function and applied the local capacitance–voltage (CV) profiling to WSe₂, a representative atomic-layer semiconductor. The obtained local CV profiles revealed the ambipolar behavior of WSe₂ and capacitance change under illumination was found to increase by approximately one order of magnitude compared to that without illumination.