Presentation Information
[8a-N206-4]Development of variable-time-sweep local CV profiling method using time-resolved scanning nonlinear dielectric microscopy — Extension to faster voltage-sweep rates —
〇Tomohiro Suzuki1,2, Kohei Yamasue2 (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)
Keywords:
scanning nonlinear dielectric microscopy,scanning probe microscope,semiconductor
The performance of MIS devices is strongly affected by the insulator-semiconductor interface. To probe the interface at the microscopic level, we extended the voltage-sweep time of local CV profiles using a time-resolved scanning nonlinear dielectric microscopy from the conventional 10-100 µs/cycle to 1-10 µs/cycle. In combination with our previous report, this enables variable-time-sweep local CV profiling over five orders of magnitude from 1 µs to 10 ms/cycle.