[8a-N301-1~11] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-2] ITO film thickness dependence of highly reflective ITO/Al electrodes for deep ultraviolet LED

〇Kenta Takase¹, Naoki Hamashima¹, Ryuunosuke Oka¹, Sena Miura¹, Teppei Takehisa¹, Hibiki Muto¹, Marina Fujita¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Hisanori Ishiguro¹, Yoshiki Saito², Koji Okuno² (1.Meijjo Univ., 2.TOYODA GOSEI)

Keywords:

Deep Ultraviolet LED,ITO/Al,film thickness dependence

The power conversion efficiency of deep ultraviolet LEDs is approximately 10%. To improve power conversion efficiency, it is necessary to improve light extraction efficiency, which requires a structure that increases the reflectance of the p-electrode. In our laboratory, when using Ni/Au electrodes with a reflectance of 30% (at λ = 270 nm), the power conversion efficiency is approximately 2.6%, so we are conducting research on high-reflectance electrodes using ITO/Al electrodes. With ITO/Al electrodes, the trade-off between increasing light output and voltage through thinning the ITO film thickness is a challenge, and little research has been conducted on the optimal ITO film thickness. Therefore, in this study, we aimed to enhance efficiency in ITO/Al electrodes by fabricating LED devices with different ITO film thicknesses, conducting reflectance measurements and I-V-L measurements, and comparing the results.