[8a-N301-1~11] 15.4 III-V-group nitride crystals | The 86th JSAP Autumn Meeting 2025

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[8a-N301-1~11]15.4 III-V-group nitride crystals

Mon. Sep 8, 2025 9:00 AM - 12:00 PM JST
Mon. Sep 8, 2025 12:00 AM - 3:00 AM UTC

N301 (Lecture Hall North)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-1]AlN molar fraction dependence of hole concentration in polarization-doped AlGaN without Mg doping

〇Teppei Takehisa¹, Hibiki Muto¹, Sena Miura¹, Marina Fujita¹, Kenta Takase¹, Hisanori Ishiguro¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Yoshiki Saito², Koji Okuno² (1.Meijo Univ., 2.TOYODA GOSEI)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-2]ITO film thickness dependence of highly reflective ITO/Al electrodes for deep ultraviolet LED

〇Kenta Takase¹, Naoki Hamashima¹, Ryuunosuke Oka¹, Sena Miura¹, Teppei Takehisa¹, Hibiki Muto¹, Marina Fujita¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Hisanori Ishiguro¹, Yoshiki Saito², Koji Okuno² (1.Meijjo Univ., 2.TOYODA GOSEI)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-N301-3]Study on Graded AlGaN Layer in AlGaN-based Far-UVC LEDs

〇Ryota Akaike^1,2, Hiroki Yasunaga^2,3, Takao Nakamura^1,2, Shuhei Ichikawa^4,5, Kazunobu Kojima⁴, Masahiko Tsuchiya⁶, Hideto Miyake^1,2 (1.Grad. Sch. of Eng., Mie Univ., 2.IC-SDF, Mie Univ., 3.ORIP, Mie Univ., 4.Grad. Sch. of Eng., Osaka Univ., 5.UHVEM, Osaka Univ., 6.Stanley Electric Co.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[8a-N301-4]High Quality of DC-sputtered AlN Assisted by High Temperature Annealing and Demonstration of 0.42% Efficient far-UVC LED

〇Muhammad Ajmal Khan¹, Yuya Nagata^1,2, Kohei Fujimoto^1,2, Hiromitsu Sakai³, Yukio Kashima¹, Eriko Matsuura¹, Hiroyuki Yaguchi², Atsushi Maeoka⁴, Atsushi Osawa⁴, Hideki Hirayama¹ (1.RIKEN, Japan, 2.Saitama Univ., Japan, 3.Shin-Etsu Chemical Japan, 4.SCREEN Holdings Co., Ltd Japan)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[8a-N301-5]Countermeasures for the degradation of 275-nm-band AlGaN LEDs

〇Shigefusa Chichibu¹, Kohei Shima¹, Koji Okuno², Masaki Oya², Atsushi Miyazaki², Shin-ya Boyama², Yoshiki Saito², Yoshio Honda³, Hiroshi Amano³, Hisanori Ishiguro⁴, Tetsuya Takeuchi⁴ (1.Tohoku Univ., 2.Toyoda Gosei, 3.Nagoya Univ., 4.Meijo Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-6]Low-Temperature Annealing and Interface Reaction Analysis for Ohmic Contacts in AlGaN UV-B LDs

〇(M1)Ryota Watanabe¹, Takumu Saito¹, Shundai Maruyama¹, Rintaro Miyake¹, Shogo Karino¹, Yusuke Sasaki¹, Naoki Kitta¹, Seiya Kato¹, Yuma Miyamoto¹, Sion Kamiya¹, Sho Iwayama¹, Yasuo Koide¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-7]AlGaN UV-B refractive index waveguide laser diodes: dependence of Optical characteristics and etching effects

〇(M2)Rintaro Miyake¹, Takumu Saito¹, Shundai Maruyama¹, Shogo Karino¹, Yusuke Sasaki¹, Shion Kamiya¹, Ryota Watanabe¹, Yuma Miyamoto¹, Naoki Kitta¹, Seiya Kato¹, Syo Iwayama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-8]Improvement of optical gain by low-temperature growth in AlGaN-based UV-B

〇(M2)Shundai Maruyama¹, Takumu Saito¹, Rintaro Miyake¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma MIyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto MIyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ, 2.Mie Univ)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[8a-N301-9]Impact of Growth Temperature on PL FWHM in AlGaN Layers of LD-Designed Samples

〇(M2)Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto Miyake², Yoshihiro Kangawa³, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ., 3.Kyushu Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N301-10]Demonstration of high carrier injection efficiency (>50%) AlGaN-based UV-B laser diodes

〇(M2)Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-11]Reliability Evaluation in AlGaN-based UV-B Laser Diodes

〇(M1)Shion Kamiya¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

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