[8a-N301-1~11] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-8] Improvement of optical gain by low-temperature growth in AlGaN-based UV-B

〇(M2)Shundai Maruyama¹, Takumu Saito¹, Rintaro Miyake¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma MIyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto MIyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ, 2.Mie Univ)

Keywords:

Semiconductor laser

In this study, the influence of crystal growth temperature on the optical properties of AlGaN-based UV-B laser diodes (LDs) was evaluated. Samples were fabricated by metal-organic vapor phase epitaxy (MOVPE) at growth temperatures ranging from 750°C to 1000°C, and their net modal gain and gain spectra were analyzed using the Variable Stripe Length (VSL) method. As a result, a significant improvement in optical gain characteristics was observed, including a reduction in the threshold excitation density and a narrowing of the gain spectral linewidth, with decreasing growth temperature. These results suggest that low-temperature growth contributes to the enhancement of gain characteristics.