Presentation Information
[8a-N301-9]Impact of Growth Temperature on PL FWHM in AlGaN Layers of LD-Designed Samples
〇(M2)Takumu Saito1, Rintaro Miyake1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Seiya Kato1, Naoki Kitta1, Ryota Watanabe1, Yuma Miyamoto1, Shion Kamiya1, Sho Iwayama1, Hideto Miyake2, Yoshihiro Kangawa3, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.Mie Univ., 3.Kyushu Univ.)
Keywords:
nitride,UV LD,metal organic vapor phase epitaxy
High-quality AlGaN crystal growth is generally achieved via MOVPE at temperatures above 1000 °C. However, in UV-LEDs and LDs employing polarization doping, low-temperature growth has been reported to improve device performance by enabling the formation of sharp heterointerfaces. In this study, we focused on the growth temperature of the active layer and compared the photoluminescence (PL) full width at half maximum (FWHM) for samples grown at different temperatures. The FWHM decreased by approximately 40% under low-temperature growth, suggesting reduced compositional fluctuation and sharper interfaces.