Presentation Information
[8a-N302-6]A study of relationship between switching resistance in graphene/sumanene/graphene stacked structure and HAXPES spectra modulation
〇Ryoichi Kawai1, Yoshiharu Kirihara1, Reika Fujie1, Ryosuke Katsumata1, Kana Tabata1, Kaito Kimijima1, Tappei Nishihara2, Ryousuke Ishikawa1, Hiroshi Nohira1, Yuichiro Mitani1 (1.Tokyo City University, 2.JASRI)
Keywords:
sumanene,graphene,resistive switching
Sumanene is a molecule (C21H12) with a bowl-shaped steric structure composed of carbon and hydrogen. Based on previous studies with density functional theory-based simulations, we have fabricated Al/graphene/Sumane/graphene/n+-Si/ Al stacked structures. J-V (current density-voltage) measurements of the device were performed, which experimentally confirmed the development of memory characteristics due to the large resistance change. It was also found to be caused exclusively by graphene/smannane/graphene. However, the mechanism of this resistance change has yet to be elucidated. In this study, we fabricated a metal-insulator-metal (MIM) structure using Sumanene molecules and attempted to clarify the mechanism by which Sumanene induces resistance changes by HAXPES, which allows in-situ observation while voltage is applied.