The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[8a-N302-1~11]17.3 Layered materials

Mon. Sep 8, 2025 9:00 AM - 12:00 PM JST
Mon. Sep 8, 2025 12:00 AM - 3:00 AM UTC
N302 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[8a-N302-1][The 58th Young Scientist Presentation Award Speech] In-situ Observation of Dynamic Precursor Droplets and Abnormal One-dimensional Growth During Vapor–Liquid–Solid Growth of Monolayer WS2 in a Substrate-Stacked Microreactor

〇Yutaro Senda1, Yuta Takahashi2, Shun Fujii2, Yasuhiko Hayashi1, Hiroo Suzuki1 (1.Okayama Univ., 2.Keio Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[8a-N302-2]Temperature-tunable operando- and multi-energy XPES analysis of monolayer MoS2/c-sapphire structure

〇Takahiro Nagata1, Yoshiki Sakuma1, Masaaki Kobata2, Tatsuo Fukuda2, Tomonori Nishimura3, Shuhong Li3, Juiteng Chang3, Keisuke Atsumi3, Kaito Kanahashi3, Kosuke Nagashio3 (1.NIMS, 2.JAEA, 3.The Univ. of Tokyo)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-N302-3]TEM analysis of stacking structure at the highly oriented MoS2/sapphire interface

〇Emi Kano1, Jun Nara2, Tosiki Yasuno1, Ryota Tanaka1, Xu Yang1, Keisuke Atsumi3, Shuhong Li3, Kosuke Nagashio3, Yoshiki Sakuma2, Nobuyuki Ikarashi1 (1.Nagoya Univ., 2.NIMS, 3.Univ. of Tokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[8a-N302-4]Identifying point defects in monolayer WSe2 using conductive AFM

〇Yuta Sawai1,2, Takahiko Endo1, Ryotaro Sakakibara1,2, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[8a-N302-5]Influence of gas in reactive ion etching on MoS2 film

〇Kotaro Kobayashi1, Matsunaga Naoki1, Jang Jaehyo1, Ito Soma1, Teraoka Kaede1, Nozawa Shunsuke1, Fuse Taiga1, Tatsumi Tetsuya2, Wakabayashi Hitoshi2 (1.Science Tokyo, 2.Science Tokyo IIR)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[8a-N302-6]A study of relationship between switching resistance in graphene/sumanene/graphene stacked structure and HAXPES spectra modulation

〇Ryoichi Kawai1, Yoshiharu Kirihara1, Reika Fujie1, Ryosuke Katsumata1, Kana Tabata1, Kaito Kimijima1, Tappei Nishihara2, Ryousuke Ishikawa1, Hiroshi Nohira1, Yuichiro Mitani1 (1.Tokyo City University, 2.JASRI)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N302-7]Synthesis and Evaluation of High-Performance Sensing Materials Based on MoS2

〇Wataru Ise1, Seiya Yokokura1,2, Hiroki Waizumi1,2, Toshihiro Shimada1,2 (1.CSE. Hokkaido Univ., 2.Eng. Hokkaido Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N302-8]Crystallization Behavior of Amorphous TiS2 Electrode for the Realization of Low-Contact Resistance MoS2 Transistor

〇Toshiya Sasaki1, Mihyeon Kim1, Fons Paul2, Yuta Saito1,3 (1.Tohoku Univ., 2.Keio Univ., 3.Tohoku Univ. GXT)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N302-9]Low-temperature catalytic graphitization of hard carbon with Mg

〇(M2)Kotaro Taki1, Takashi Uchino1 (1.Kobe Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N302-10]<!--StartFragment-->Activation of Lower Alkanes Using In-Plane Tunnel Junctions Based on Atomic Layers<!--EndFragment-->

〇(M1)Koki Kamiya1, Ryo Nouchi1 (1.Osaka Metro. Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[8a-N302-11]Methane Activation by Hot Carriers Generated in Vertical Nanosheet-Based Tunnel Junctions

〇Riku Konishi1, Ryo Nouchi1 (1.Osaka Metro. Univ.)
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