Presentation Information
[8a-N401-8]Development of a film formation process of Ge1−xSnx solid solutions with a high Sn composition through melting and non-equilibrium solidification via pulsed laser annealing
〇(M1)Yusuke Suzuki1, Ryoji Katsube1, Yuki Imai1, Shota Suzuki2, Hideaki Minamiyama2, Marwan Dhamrin2,3, Shigehisa Shibayama1, Osamu Nakatsuka1,4, Noritaka Usami1,4,5 (1.Nagoya Univ., 2.Toyo Alminiumu K.K., 3.Osaka Univ., 4.IMaSS, 5.InFuSS Nagoya Univ.)
Keywords:
GeSn,pulsed laser annealing,non-equilibrium solidification
Ge1−x Snx alloys with high Sn composition are IV-group semiconductors that exhibit a direct bandgap structure and demonstrate high effective carrier mobility, making them optically and electrically attractive semiconductor materials. However, the realization of a direct bandgap requires an Sn composition of ~8 mol% or higher, which is higher than the equilibrium solid solubility limit (~1 mol%), necessitating a process to achieve non-equilibrium conditions. We have been investigating the formation of GeSn alloys on Sn-coated Ge substrates using pulse laser annealing (PLA), a non-equilibrium thermal treatment method conducted under non-vacuum conditions. In this study, we focused on pulse laser irradiation conditions and heat removal during PLA to aim for the fabrication of high-Sn-content Ge1−x Snx alloy continuous films.