Session Details
[8a-N401-1~12]15.5 Group IV crystals and alloys
Mon. Sep 8, 2025 9:30 AM - 12:30 PM JST
Mon. Sep 8, 2025 12:30 AM - 3:30 AM UTC
Mon. Sep 8, 2025 12:30 AM - 3:30 AM UTC
N401 (Lecture Hall North)
[8a-N401-1]DFT study on formation energy of SiSn, GeSn, and SiGe crystals (I)
Investigation of stable atomic configuration covering all independent configurations -
〇Kouji Sueoka1, Hibiki Bekku2, Yusuke Noda3 (1.Okayama Pref. Univ., 2.Grad. School of Okayama Pref. Univ., 3.Kyushu Inst. of Technology)
[8a-N401-2]DFT study on formation energy of SiSn, GeSn, and SiGe crystals (II)
- Searching for stable structures by using genetic algorithm –
〇Hibiki Bekku1, Koji Sueoka2, Yusuke Noda3 (1.Grad. Sch. Comput. Sci. Syst. Eng., Okayama Pref. Univ., 2.Fac. Comput. Sci. Syst. Eng., Okayama Pref. Univ., 3.Kyushu Inst. Technol.)
[8a-N401-3]Nucleus formation of Ge, Si by the core electron excitation and atom migration
〇Naoto Matsuo1, Akira Heya1, Koji Sumitomo1, Kazushige Yamana1, Tetsuo Tabei2 (1.Univ. Hyogo, 2.Hiroshima Univ.)
[8a-N401-4]Rapid formation of GeH layers on Ge/Si(111) at room temperature
〇Kaito Nakajima1, Atsuki Nakayama1, Wei-Chen Wen2, Yuji Yamamoto2, Shigehisa Shibayama1, Mitsuo Sakashita1, Osamu Nakatsuka1,3, Masaaki Araidai1,3, Masashi Kurosawa1 (1.Nagoya Univ., 2.IHP - Leibniz Institute for High Performance Microelectronics, 3.IMaSS)
[8a-N401-5]Effect of Al and Al2O3 layers on the selective area growth of GeS thin films
〇Qinqiang Zhang1, Ryo Matsumura1, Naoki Fukata1,2 (1.NIMS, 2.Univ. of Tsukuba)
[8a-N401-6]The Effect of Substrate Temperature during Hydrogen Plasma Exposure on Au
on Growth of Vertically Oriented Ge Wires on Quartz Substrate
〇Mihaeru Uematsu1, Shin-ichi Kobayashi1 (1.Tokyo Polytechnic Univ.)
[8a-N401-7]Si Incorporation into High-Speed CWLA-Grown Ge Thin Films for Wavelength Control of Light Emission
〇YUTA GOTO1,2, Matsumura Ryo1, Fukata Naoki1,2 (1.NIMS, 2.Univ. of Tsukuba)
[8a-N401-8]Development of a film formation process of Ge1−xSnx solid solutions with a high Sn composition through melting and non-equilibrium solidification via pulsed laser annealing
〇(M1)Yusuke Suzuki1, Ryoji Katsube1, Yuki Imai1, Shota Suzuki2, Hideaki Minamiyama2, Marwan Dhamrin2,3, Shigehisa Shibayama1, Osamu Nakatsuka1,4, Noritaka Usami1,4,5 (1.Nagoya Univ., 2.Toyo Alminiumu K.K., 3.Osaka Univ., 4.IMaSS, 5.InFuSS Nagoya Univ.)
[8a-N401-9]Thermoelectric Performance of Polycrystalline Mg2SiGeSn Thin Films
〇(M1)Takenori Nakajima1, Takamitsu Ishiyama1, Shintaro Maeda1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba)
[8a-N401-10]Solid phase crystallization of P-doped Si films on high-resistivity Si(001) substrates
〇Yuki Kimura1, Shigehisa Shibayama1, Mitsuo Sakashita1, Yasuyoshi Kurokawa1,2, Noritaka Usami1,2,3, Osamu Nakatsuka1,3, Masashi Kurosawa1 (1.Grad. Sch. of Eng., Nagoya Univ., 2.InFuS, Nagoya Univ., 3.IMaSS, Nagoya Univ.)
[8a-N401-11]Development of large-area SiGe/Si substrates using screen printing
〇Ryo Nakao1, Shota Suzuki1, Moeko matsubara1, Hideaki Minamiyama1, Marwan Dhamrin2 (1.Toyo Aluminium K.K., 2.Osaka Univ.)
[8a-N401-12]Solid phase crystallization of amorphous Ge thin film on MgO/SiO2 thin film
〇(B)Naoto Mitsunaga1, Haruki Ezaki1, Haruki Yamada1, Yuji Fuchiwaki1, Kenichiro Takakura1, Taizoh Sadoh2, Isao Tsunoda1 (1.NIT, Kumamoto College, 2.Kyushu Univ.)