[8a-N403-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[8a-N403-9] Theoretical analysis of trap-assisted tunneling current in SiC Schottky barrier diodes

〇Ryo Ogawa¹, Hajime Tanaka^1,2, Nobuya Mori¹ (1.Univ. of Osaka, 2.Kwansei Gakuin Univ.)

Keywords:

Schottky barrier diodes,electron traps,tunneling