The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-N403-1~10]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Mon. Sep 8, 2025 9:00 AM - 11:45 AM JST
Mon. Sep 8, 2025 12:00 AM - 2:45 AM UTC
N403 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N403-1]Surface characterization of bottoms of Si trenches fabricated by wet processes

〇Shiika Murase1, Tomiki Higashi1, Kouji Inagaki1, Kenta Arima1 (1.UOsaka)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[8a-N403-2]Fabrication of SiO2/Si Structures by Solution Oxidation Using Sulfuric Acid

〇Shouhei Onizuka, Hoshiki Harata, Yoshitaka Iwazaki, Tomo Ueno
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-N403-3]New method to analyze thickness of ultra-thin oxide film on semiconductor substrate
- Approach combining X-ray photoelectron spectroscopy spectra with numerical analysis -

〇Hiroki Takano1, Kouji Inagaki1, Kenta Arima1, Shohei Miyagawa2, Takuma Takeda2, Masayuki Otsuji2, Koichi Sawada2 (1.UOsaka, 2.SCREEN Holdings Co., Ltd.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[8a-N403-4]Influence of annealing ambient on the ferroelectric characteristics of HfN thin films formed by ECR-plasma sputtering

〇(D)KANGBAI LI1, Shun-ichiro Ohmi1 (1.Science Tokyo)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[8a-N403-5]Experimental approaches to evaluating the fracture strength of ultra-thin Silicon dies

〇Kazushiro Nomura1, Yuma Yamashita1, Yoshiki Abe1, Kenichi Oohashi1, Fumiyoshi Kawashiro1, Takamitsu Noda1 (1.Toshiba Electronic Devices and Storage Corporation)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)English Presentation

[8a-N403-6]Influence of the Up-Conversion Effect on the Photocatalytic Activity of NaLuF4:Yb:Ho@NaLuF4:Yb:Nd@TiO2 Core–Shell Structures under Visible Light Irradiation

〇(PC)Joanna Nadolna1,2, Routian Chen1,3, Pawel Mazierski2, Zhishun Wei4, Tomasz Grzyb5, Patrycja Szwedowska2, Prajakta Kokate1, Keshav Dani1 (1.Okinawa Inst. of Sci. and Tech. Grad. Univ., 2.Univ. of Gdansk, 3.Dalian Inst. of Chem. Phys., 4.Hubei Univ. of Tech., 5.Adam Mickiewicz Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[8a-N403-7]Molecular dynamics study of a-(SiO2)x(Al2O3)1-x /GaN interface using machine learning force field

〇Koki Sato1, Mutsunori Uenuma2, Ryousuke Jinnouchi1, Ryoji Asahi1 (1.Nagoya Univ., 2.AIST)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N403-8]Study on the Design of Electron Transport Properties in Semiconductor Nanowires via Physics-Constrained Impurity Distribution Generation Using Variational Autoencoders

〇Satoru Sugiyama1, Yoshitaka Itoh1, Suko Tota2, Masakazu Muraguchi1 (1.Hokkaido Univ of Sci., 2.Waseda Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[8a-N403-9]Theoretical analysis of trap-assisted tunneling current in SiC Schottky barrier diodes

〇Ryo Ogawa1, Hajime Tanaka1,2, Nobuya Mori1 (1.Univ. of Osaka, 2.Kwansei Gakuin Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N403-10]TCAD Analysis of the Impact of 3C/4H-SiC Heterostructures on Device Characteristics

〇(M1)Kota Gejo1, Hatakeyama Tetsuo1, Nagasawa Hiroyuki2,3 (1.Toyama Pref. Univ., 2.CUSIC, 3.Tohoku Inst.)
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