[8a-P08-1~3] 13.2 Exploratory Materials, Physical Properties, Devices

[8a-P08-2] Impact of Ag film diffusion depth in Mg₂Si Substrate

〇(M1)Yuki Iino¹, Hideto Takei¹, Hibiki Katumata¹, Ryousuke Furuta¹, Shunya Sakane¹, Hruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg2Si,SWIR,Image Sensors

The diffusion behavior of Ag thin films was evaluated as a function of film thickness. When the Ag film thickness was reduced to 20 nm, the diffusion depth was approximately 10 µm after thermal treatment at 450 °C and 400 °C for 10 minutes. Compared to the 100 nm thick films, which showed much deeper junctions, the thinner films resulted in significantly shallower diffusion. This suggests that limited Ag supply becomes the rate-limiting factor, resulting in a different concentration profile from that of thick films.