Presentation Information
[8p-N105-4]Fabrication of Oxide Semiconductor Thin Films by Mist-CVD Method and Improvement of Transistor Performance2
〇KEIGO EBATO1, SIMIZU KOUSAKU1 (1.Nihon Univ.)
Keywords:
Mist-CVD method
Compared to sputtering and plasma CVD, Mist-CVD has the advantages of being
safe, low cost, and low environmental impact. We report on the improvement of TFT
characteristics when ozone treatment or atomic oxygen treatment is performed after film
formation.
It was found that the carboxyl group R-COOH was reduced by ozone treatment
after film formation. The TFT characteristics of TFTs that were ozone treated after film
formation were improved in both SS and mobility. Impurities were not completely removed
when film formation was performed using carrier gas alone, but impurities were properly
removed from TFTs that were ozone treated after film formation and then atomic oxygen
treated. It was confirmed that the ITZO that was treated with ozone after film formation had
fewer defects and was close to ITZO produced by sputtering.
safe, low cost, and low environmental impact. We report on the improvement of TFT
characteristics when ozone treatment or atomic oxygen treatment is performed after film
formation.
It was found that the carboxyl group R-COOH was reduced by ozone treatment
after film formation. The TFT characteristics of TFTs that were ozone treated after film
formation were improved in both SS and mobility. Impurities were not completely removed
when film formation was performed using carrier gas alone, but impurities were properly
removed from TFTs that were ozone treated after film formation and then atomic oxygen
treated. It was confirmed that the ITZO that was treated with ozone after film formation had
fewer defects and was close to ITZO produced by sputtering.