Session Details
[8p-N105-1~8]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Mon. Sep 8, 2025 1:30 PM - 3:30 PM JST
Mon. Sep 8, 2025 4:30 AM - 6:30 AM UTC
Mon. Sep 8, 2025 4:30 AM - 6:30 AM UTC
N105 (Lecture Hall North)
[8p-N105-1]Nonvolatile Resistive Switching Memory Characteristics and Interfacial Structure of AlOx/SiC Heterojunctions
〇Yumeng Zheng1, Tomohiro Baba1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci.)
[8p-N105-2]Mechanism of high-quality AlOx thin film formation at 350℃ in mist CVD Ⅰ
〇Toshiyuki Kawaharamura1, Miyabi Fukue1, Li Liu1, T. Giang DANG1, Toshinobu FUJIMURA2 (1.Kochi Univ. of Tech., 2.NOF Corporation)
[8p-N105-3]Mechanism of high-quality AlOx thin film formation at 350℃ in mist CVD Ⅱ
〇Toshiyuki Kawaharamura1, Miyabi Fukue1, Li Liu1, T. Giang DANG1, Hirotaka ITO1, Toshinobu FUJIMURA2 (1.Kochi Univ. of Tech., 2.NOF Corporation)
[8p-N105-4]Fabrication of Oxide Semiconductor Thin Films by Mist-CVD Method and Improvement of Transistor Performance2
〇KEIGO EBATO1, SIMIZU KOUSAKU1 (1.Nihon Univ.)
[8p-N105-5]Thin-Film Stabilization of Orthorhombic ITO
〇Hiroyuki Yamada1, Yoshikiyo Toyosaki1, Akihito Sawa1 (1.AIST)
[8p-N105-6]Fabrication and Characterization of Metal Oxide Films Using Mist CVD
〇Kaoru Hamada1, Yoshihiro Ichinohe1 (1.HUS Grad.Eng.Elect.Eng)
[8p-N105-7]Influence of Annealing Atmosphere on Property of Nitrogen Doped ZnO Films
〇Yumika Yamada1,2, Haruki Ohmori2, Abrarul Haque2, Shuhei Funaki2, Yasuji Yamada2 (1.Kobelco Res. Inst. Inc., 2.Shimane Univ.)
[8p-N105-8]Carrier Transport of Ultra-Thin W-doped In2O3 Films
〇Tetsuya Yamamoto1, Hisashi Kitami2, Yugo Okada2 (1.Kochi Univ. Tech., Res. Inst., 2.SHI)