Session Details

[8p-N105-1~8]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 8, 2025 1:30 PM - 3:30 PM JST
Mon. Sep 8, 2025 4:30 AM - 6:30 AM UTC
N105 (Lecture Hall North)

[8p-N105-1]Nonvolatile Resistive Switching Memory Characteristics and Interfacial Structure of AlOx/SiC Heterojunctions

〇Yumeng Zheng1, Tomohiro Baba1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci.)

[8p-N105-2]Mechanism of high-quality AlOx thin film formation at 350℃ in mist CVD Ⅰ

〇Toshiyuki Kawaharamura1, Miyabi Fukue1, Li Liu1, T. Giang DANG1, Toshinobu FUJIMURA2 (1.Kochi Univ. of Tech., 2.NOF Corporation)

[8p-N105-3]Mechanism of high-quality AlOx thin film formation at 350℃ in mist CVD Ⅱ

〇Toshiyuki Kawaharamura1, Miyabi Fukue1, Li Liu1, T. Giang DANG1, Hirotaka ITO1, Toshinobu FUJIMURA2 (1.Kochi Univ. of Tech., 2.NOF Corporation)

[8p-N105-4]Fabrication of Oxide Semiconductor Thin Films by Mist-CVD Method and Improvement of Transistor Performance2

〇KEIGO EBATO1, SIMIZU KOUSAKU1 (1.Nihon Univ.)

[8p-N105-5]Thin-Film Stabilization of Orthorhombic ITO

〇Hiroyuki Yamada1, Yoshikiyo Toyosaki1, Akihito Sawa1 (1.AIST)

[8p-N105-6]Fabrication and Characterization of Metal Oxide Films Using Mist CVD

〇Kaoru Hamada1, Yoshihiro Ichinohe1 (1.HUS Grad.Eng.Elect.Eng)

[8p-N105-7]Influence of Annealing Atmosphere on Property of Nitrogen Doped ZnO Films

〇Yumika Yamada1,2, Haruki Ohmori2, Abrarul Haque2, Shuhei Funaki2, Yasuji Yamada2 (1.Kobelco Res. Inst. Inc., 2.Shimane Univ.)

[8p-N105-8]Carrier Transport of Ultra-Thin W-doped In2O3 Films

〇Tetsuya Yamamoto1, Hisashi Kitami2, Yugo Okada2 (1.Kochi Univ. Tech., Res. Inst., 2.SHI)