[8p-N202-1~18] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[8p-N202-10] Examination of selective quantum well intermixing on III-V on insulator wafer

〇(M2)Sheng Fu¹, Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. Tokyo)

Keywords:

III-V membrane,wafer bonding,active-passive integration

This research explores selective quantum well intermixing (QWI) on a III-V-on-insulator platform to create multiple bandgap energies for monolithic photonic integration. A single ion implantation was performed on patterned samples. Photoluminescence (PL) measurements indicates that phosphorus vacancies diffused laterally from the implanted areas, with an estimated diffusion length around 1 µm. The results demonstrate that controlling the bandgap energy is achievable through submicron-scale patterning, making selective QWI a promising technique for fabricating integrated photonic circuits.