[8p-N202-1~18] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N202-6] High misalignment tolerant compound semiconductor on dielectric or Si waveguide
direct bonding structure based on taper waveguide

〇Hideaki Okayama¹, Hiroyuki Takahashi¹, Hideaki Ono¹, Daisuke Shimura¹, Tanigawa Kenichi¹, Takahito Suzuki¹, Hironori Huruta¹, Nobuhiko Nishiyama² (1.OKI, 2.Science Univ. Tokyo)

Keywords:

heterogeneous integration,silicon waveguide

We report a scheme achieving misalignment tolerance above 3 microns for direct bonding of III-V material and Si optical waveguide devices. A tapered waveguide structure is used. A tapered III-V material waveguide is placed on wide Si or dielectric waveguide.