[8p-N204-1~18] 3.11 Nanoscale optical science and near-field optics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N204-1] Enhancement of Near-Infrared Sensitivity of Silicon Image Sensors by Wide-Angle Plasmonic Diffraction

〇(M2)Koya Okazaki¹, Nobukazu Teranishi², Atsushi Ono^1,2 (1.Shizuoka Univ., 2.RIE Shizuoka Univ.)

Keywords:

plasmonics,image sensor,near-infrared

Improvement of the near-infrared (NIR) sensitivity in silicon image sensors is required for the applications to Time-of-Flight (ToF), security, and medical inspection. We proposed enhancement of the NIR absorption with wide incident angles by trapping the light within the silicon layer under the quasi-resonance of surface plasmons. The photon confinement significantly increased silicon integrated absorption at a wavelength of 940 nm to over 40% within an angle range of ±15 degrees.