Presentation Information

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-10]Characterization of carrier dynamics in a core-shell InGaN nanowire LED

〇Sota Komiyama¹, Shuhei Ichikawa^1,2, Renji Okuda³, Masaya Ueda³, Naoki Sone³, Akihiro Nomura³, Satoshi Kamiyama⁴, Hiroshi Tabata¹, Kazunobu Kojima¹ (1.The Univ. of Osaka, 2.Research Center for UHVEM, The Univ. of Osaka, 3.Koito Manufacturing Co., Ltd., 4.Meijo Univ.)

Keywords:

nanowire LED,InGaN,time-resolved photoluminescence

InGaN-based blue LEDs exhibit extremely high external quantum efficiency at low current densities. However, the efficiency droop phenomenon where efficiency decreases at high current densities remains a critical issue. Core–shell InGaN nanowire LEDs grown bottom-up on c-plane sapphire substrates have been investigated as a potential solution to suppress efficiency droop. In this study, we performed time-resolved photoluminescence measurements on core–shell InGaN nanowire LEDs to evaluate their emission characteristics, including carrier lifetimes.

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