[8p-N301-1~19] 15.4 III-V-group nitride crystals | The 86th JSAP Autumn Meeting 2025

Advanced Search

Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[8p-N301-1~19]15.4 III-V-group nitride crystals

Mon. Sep 8, 2025 1:30 PM - 6:45 PM JST
Mon. Sep 8, 2025 4:30 AM - 9:45 AM UTC

N301 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-N301-1]Direct growth of InGaN nanocolumns via nanotemplate selective-area growth using Ni mask

〇Satoshi Ishikawa¹, Nozomu Tomiyama¹, Rie Togashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[8p-N301-2]Honeycomb-latticed InGaN/GaN nanocolumns grown by nanotemplate selective-area
growth using Ni mask for plasmonic crystal applications

〇Nozomi Tomiyama¹, Satoru Ishikawa¹, Rie Togashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-N301-3]Influence of GaN Nanocolumn Height on the Selective Area Growth of GaInN

〇Takuto Katogi¹, Ryuta Shindo¹, Takumi Umemoto¹, Tomohiro Yamaguchi¹, Toru Honda¹, Takeyoshi Onuma¹, Rie Togashi², Katumi Kishino² (1.Kogakuin University, 2.Sophia University)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-N301-4]Bandgap Prediction of GaN based Topological PhC by Machine Learning

〇Hinaki Sugiura¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research Inst.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-N301-5]Observation of resonance peaks in InGaN/GaN topological PhC ring resonator

〇Hayato Kurata¹, Hinaki Sugiura¹, Seiichi Kataoka¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research Inst.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-6]Epitaxial growth of red GaInN-based multi quantum shells on porous AlGaN DBR substrates for improving optical properties

〇Aoi Nakagawa¹, Weifang Lu², Haruki Hotta¹, Takuya Takahashi¹, Koki Yamada¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Xiamen Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-7]Optimization of n-GaN Nanowire Growth using a Face-Down MOVPE System

〇(M1)Koki Yamada¹, Seiji Ishimoto², Naoto Fukami¹, Aoi Nakagawa¹, Haruki Hotta¹, Takuya Takahashi¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.E&E co.ltd)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-8]Investigation of Mg concentration dependence during p+-GaN growth for quantum-shell devices using nanowire structures

〇Takuya Takahashi¹, Kazumasa Niwa², Aoi Nakagawa¹, Koki Yamada¹, Haruki Hotta¹, Naoto Fukami¹, Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.E&E Evolution Co., LTD.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-9]Investigation of Ohmic Contacts for GaInN Nano pyramid LEDs

〇Haruki Hotta¹, Aoi Nakagawa¹, Takuya Takahashi¹, Kouki Yamada¹, Satoshi Kamiyama¹, Tetsuya Takechi¹, Motoaki Iwaya¹ (1.Meijo Univ.)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-10]Characterization of carrier dynamics in a core-shell InGaN nanowire LED

〇Sota Komiyama¹, Shuhei Ichikawa^1,2, Renji Okuda³, Masaya Ueda³, Naoki Sone³, Akihiro Nomura³, Satoshi Kamiyama⁴, Hiroshi Tabata¹, Kazunobu Kojima¹ (1.The Univ. of Osaka, 2.Research Center for UHVEM, The Univ. of Osaka, 3.Koito Manufacturing Co., Ltd., 4.Meijo Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-11]Circularly polarized blue-light emission from InGaN chiral nanopillar arrays fabricated by HEATE

〇Yuu Urushibata¹, Takumi Ueki², Akihiko Kikuchi^2,3, Takao Oto¹ (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Semicon.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-12]Emission efficiency and carrier dynamics in green-emitting InGaN/GaN nanopillars

〇Hikaru Yokosawa¹, Shunya Kosuge¹, Takeki Aikawa², Umito Kurabe², Akihiko Kikuchi^2,3, Takao Oto¹ (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Semicon.)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N301-13]Red-emission enhancement from honeycomb-latticed InGaN/GaN nanocolumn tops
by using surface plasmon polariton coupling around nanocolumn lateral surface

〇Kyohei Koseki¹, Hiroto Otsuka¹, Jumpei Yamada^2,3, Koichi Okamoto⁵, Rie Togashi^3,4, Katsumi Kishino³, Takao Oto¹ (1.Yamagata Univ, 2.Keio Univ, 3.Sophia Nanotech, 4.Sophia Univ, 5.Osaka Metro. Univ)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[8p-N301-14]Cathodoluminescence studies of layered BN epilayers grown by chemical vapor deposition on a sapphire substrate

〇Shigefusa Chichibu¹, Takumi Kasuya¹, Haruto Tsujitani¹, Kazuhiko Hara², Kohei Shima¹ (1.Tohoku Univ., 2.RIE, Shizuoka Univ.)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[8p-N301-15]Strain compensated AlGaN/InGaN distributed Bragg reflector

〇Takeshi Kawashima¹, Morimasa Kaminishi¹, Chiharu Kimura¹, Shunichi Sato¹ (1.Ricoh)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[8p-N301-16]Emission Wavelength Peak control of GaInN MQWs on AlInN/GaN DBR

〇Shoki Arakawa¹, Naoki Shibahara¹, Taiki Kitamura¹, Atsunori Tokushi¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

The 86th JSAP Autumn Meeting 2025

Session Details

[8p-N301-1~19]15.4 III-V-group nitride crystals

[8p-N301-1]Direct growth of InGaN nanocolumns via nanotemplate selective-area growth using Ni mask

[8p-N301-2]Honeycomb-latticed InGaN/GaN nanocolumns grown by nanotemplate selective-area
growth using Ni mask for plasmonic crystal applications

[8p-N301-3]Influence of GaN Nanocolumn Height on the Selective Area Growth of GaInN

[8p-N301-4]Bandgap Prediction of GaN based Topological PhC by Machine Learning

[8p-N301-5]Observation of resonance peaks in InGaN/GaN topological PhC ring resonator

[8p-N301-6]Epitaxial growth of red GaInN-based multi quantum shells on porous AlGaN DBR substrates for improving optical properties

[8p-N301-7]Optimization of n-GaN Nanowire Growth using a Face-Down MOVPE System

[8p-N301-8]Investigation of Mg concentration dependence during p+-GaN growth for quantum-shell devices using nanowire structures

[8p-N301-9]Investigation of Ohmic Contacts for GaInN Nano pyramid LEDs

[8p-N301-10]Characterization of carrier dynamics in a core-shell InGaN nanowire LED

[8p-N301-11]Circularly polarized blue-light emission from InGaN chiral nanopillar arrays fabricated by HEATE

[8p-N301-12]Emission efficiency and carrier dynamics in green-emitting InGaN/GaN nanopillars

[8p-N301-13]Red-emission enhancement from honeycomb-latticed InGaN/GaN nanocolumn tops
by using surface plasmon polariton coupling around nanocolumn lateral surface

[8p-N301-14]Cathodoluminescence studies of layered BN epilayers grown by chemical vapor deposition on a sapphire substrate

[8p-N301-15]Strain compensated AlGaN/InGaN distributed Bragg reflector

[8p-N301-16]Emission Wavelength Peak control of GaInN MQWs on AlInN/GaN DBR

[8p-N301-17]Investigation of growth conditions for resonance wavelength uniformity in VCSELs

[8p-N301-18]Reducing device resistance for higher efficiency of GaN-based vertical-cavity surface-emitting lasers

[8p-N301-19]Effect of aperture on laser characteristics of GaN-based vertical-cavity surface-emitting lasers

Session Details

[8p-N301-1~19]15.4 III-V-group nitride crystals

[8p-N301-1]Direct growth of InGaN nanocolumns via nanotemplate selective-area growth using Ni mask

[8p-N301-2]Honeycomb-latticed InGaN/GaN nanocolumns grown by nanotemplate selective-areagrowth using Ni mask for plasmonic crystal applications

[8p-N301-3]Influence of GaN Nanocolumn Height on the Selective Area Growth of GaInN

[8p-N301-4]Bandgap Prediction of GaN based Topological PhC by Machine Learning

[8p-N301-5]Observation of resonance peaks in InGaN/GaN topological PhC ring resonator

[8p-N301-6]Epitaxial growth of red GaInN-based multi quantum shells on porous AlGaN DBR substrates for improving optical properties

[8p-N301-7]Optimization of n-GaN Nanowire Growth using a Face-Down MOVPE System

[8p-N301-8]Investigation of Mg concentration dependence during p+-GaN growth for quantum-shell devices using nanowire structures

[8p-N301-9]Investigation of Ohmic Contacts for GaInN Nano pyramid LEDs

[8p-N301-10]Characterization of carrier dynamics in a core-shell InGaN nanowire LED

[8p-N301-11]Circularly polarized blue-light emission from InGaN chiral nanopillar arrays fabricated by HEATE

[8p-N301-12]Emission efficiency and carrier dynamics in green-emitting InGaN/GaN nanopillars

[8p-N301-13]Red-emission enhancement from honeycomb-latticed InGaN/GaN nanocolumn topsby using surface plasmon polariton coupling around nanocolumn lateral surface

[8p-N301-14]Cathodoluminescence studies of layered BN epilayers grown by chemical vapor deposition on a sapphire substrate

[8p-N301-15]Strain compensated AlGaN/InGaN distributed Bragg reflector

[8p-N301-16]Emission Wavelength Peak control of GaInN MQWs on AlInN/GaN DBR

[8p-N301-17]Investigation of growth conditions for resonance wavelength uniformity in VCSELs

[8p-N301-18]Reducing device resistance for higher efficiency of GaN-based vertical-cavity surface-emitting lasers

[8p-N301-19]Effect of aperture on laser characteristics of GaN-based vertical-cavity surface-emitting lasers

[8p-N301-2]Honeycomb-latticed InGaN/GaN nanocolumns grown by nanotemplate selective-area
growth using Ni mask for plasmonic crystal applications

[8p-N301-13]Red-emission enhancement from honeycomb-latticed InGaN/GaN nanocolumn tops
by using surface plasmon polariton coupling around nanocolumn lateral surface