Presentation Information
[8p-N302-11]Real space visualization of structural domains in SnS using valley properties
〇Daiki Sekine1, Genshiro Hiraoka2, Sota Yamamoto2, Jun Ishihara2, Makoto Kohda1,2,3,4 (1.QUARC, QST, 2.Grad. Sch. of Eng., Tohoku Univ., 3.CSIS, Tohoku Univ., 4.DEFS, Tohoku Univ.)
Keywords:
2D materials,valleytronics,domain imaging
A group IV monochalcogenide SnS is a two-dimensional layered semiconductor with a puckered structure, and has an in-plane anisotropic valley structure. We recently succeeded in fabricating SnS with structural (ferroelastic) and ferroelectric domains. By utilizing the optical transition selection rules, we expect different luminescence at different domains. In this study, we visualize the structural domains by means of photoluminescence, and clarify the properties of domains from the viewpoint of valley degree of freedom.