[8p-N302-1~20] 17.3 Layered materials

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N302-13] Analysis of Nb doping effect in monolayer WSe₂ by gate modulation PL

〇Soma Toda¹, Kaito Kanahashi¹, Tomonori Nishimura¹, Satoru Morito², Keiji Ueno², Kosuke Nagashio¹ (1.U. Tokyo, 2.Saitama Univ.)

Keywords:

transition metal dichalcogenide,photoluminescence,doping

The photoluminescence(PL) spectrum of monolayer WSe₂ changes depending on the amount of Nb dopant. In this study, we applied gate-modulated PL to Nb-doped WSe₂ to investigate the origin of the PL peak.