[8p-N302-1~20] 17.3 Layered materials

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N302-14] Highly Controlled Nb Post-Doping into WSe₂ via the Intermittent Flux Method

〇Itsuki Tanaka¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Naoshi Kakeya², Kohei Aso², Yoshifumi Oshima², Kosuke Nagashio¹ (1.UTokyo, 2.JAIST)

Keywords:

two-dimensional material,TMDC,doping

TMDCs, which are the promising materials for next generation logic semiconductors, require high-level substitutional doping to reduce the contact resistance. However, reports of substitutional doping of TMDCs remain limited. In this session, we suppose the highly controlled Nb post doping toward WSe₂ via the intermittent flux method.