Presentation Information

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N302-2]Observation of gate-induced magnetic topological-phase transition

〇(DC)Kanta Endo¹, Hideki Matsuoka^2,3, Yoshihiro Iwasa^1,3, Masaki Nakano^1,3,4 (1.Dept. of Appl. Phys. the Univ. of Tokyo, 2.Inst. of Ind. Sci. the Univ. of Tokyo, 3.RIKEN CEMS, 4.Coll. of Eng., Shibaura Inst. of Technol.)

Keywords:

Topological Hall effect,ion-gating,van der Waals magnet

The electrical control of topological magnetic structures is an important research topic in spintronics applications. We recently discovered that van der Waals ferromagnetic Cr₃Te₄ thin films exhibit the topological Hall effect (THE) at room temperature and zero magnetic field after heat treatment. In this study, we found that electrochemical Li intercalation of the Cr₃Te₄ thin films that exhibit THE enables complete switching between the THE phase and the ferromagnetic phase. In this presentation, we will discuss the details and physical origin of this phenomenon.

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