[8p-N306-1~20] 12.2 Characterization and Materials Physics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N306-6] Applicability of the standard semiconductor theory to the energy level alignment at organic/metal interface

Yuki Furukawa¹, 〇Hiroyuki Yoshida^1,2 (1.Chiba Univ., 2.MCRC Chiba Univ.)

Keywords:

interface energy level alignment,Schottky model

We investigated the applicability of the Schottky model to organic/metal interfaces based on the work function (WF) of PTCDA films on various metal substrates using a Kelvin probe. The energy bands showed gradual bending up to a thickness of around 1500 nm, at which point the Fermi level was positioned near the midpoint between the HOMO and LUMO. These observations are well explained by the Schottky model with a depletion layer on the micrometer scale. Regarding the thin film regime below 100 nm, the model can also explain the validity of the vacuum level alignment model.