Presentation Information
[8p-N321-2]Parasitic deposition in microwave plasma chemical vapor deposition
〇David VazquezCortes1, Stoffel D. Janssens1, Eliot Fried1 (1.OIST)
Keywords:
diamond growth,parasitic desposition,flow rate
In this work, we present our findings on parasitic film formation on reactor walls during microwave plasma chemical vapor deposition of diamond. Visual inspection confirms the presence of a parasitic film on the reactor walls. The diamond growth rates, estimated via laser reflectance under varying flow rates at constant methane concentration and across different methane concentrations, can only be fully explained by accounting for the simultaneous growth of diamond and parasitic films.
We propose a simplified model of the growth process that incorporates both the growth of a diamond film and the growth of a parasitic film. This model successfully explains our experimental observations. Our findings have significant implications for doped diamond growth, as dopant depletion due to incorporation into parasitic films on the reactor walls may substantially reduce dopant incorporation efficiency in the diamond
We propose a simplified model of the growth process that incorporates both the growth of a diamond film and the growth of a parasitic film. This model successfully explains our experimental observations. Our findings have significant implications for doped diamond growth, as dopant depletion due to incorporation into parasitic films on the reactor walls may substantially reduce dopant incorporation efficiency in the diamond