The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.2 Carbon-based thin films

[8p-N321-1~19]6.2 Carbon-based thin films

Mon. Sep 8, 2025 1:30 PM - 6:45 PM JST
Mon. Sep 8, 2025 4:30 AM - 9:45 AM UTC
N321 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-1]Growth of ultranano-crystalline diamond at low temperature by 13.56MHz inductively coupled plasma CVD method

〇Ryota Ando1, Satoru Nagamachi1, Natsuo Tatsumi1 (1.SEI, Ltd.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)English Presentation

[8p-N321-2]Parasitic deposition in microwave plasma chemical vapor deposition

〇David VazquezCortes1, Stoffel D. Janssens1, Eliot Fried1 (1.OIST)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-N321-3]Preparation of large diamond wafer by using 915MHz microwave plasma CVD

〇Hideaki Yamada1, Akiyoshi Chayahara1, Kaisyu Nitta1, Takehiro Shimaoka1, Yukiko Takahashi2, Yuko Aakahane2 (1.ASIT, 2.TDC)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-4]Investigation of the two-step growth process for heteroepitaxial diamond on Ir/sapphire substrates

〇Kouki Mochizuki1, Osamu Maida1, Seong-Woo Kim2, Jeffery Ang2, Shuhei Ichikawa1, Kazunobu Kojima1 (1.Osaka Univ., 2.Orbray Co., Ltd.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-5]Improved Quality of Ir Buffer Layer by Sapphire Substrate Misorientation for Large-Area Diamond Wafer Growth

〇(D)Masahiro Tsuji1, Masanori Eguchi2, Saha Niloy Chandra1, Makoto Kasu1,3 (1.Saga Univ., 2.Synchrotron Research center, Saga Univ., 3.Diamond Semiconductor Co., Ltd)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[8p-N321-6][The 58th Young Scientist Presentation Award Speech] Formation of Diamond Trench {111} Flat Sidewalls for Ultra-Low-Loss MOSFETs

〇Masatsugu Nagai1, Tsubasa Matsumoto2, Satoshi Yamasaki2, Norio Tokuda2, Moriyoshi Haruyama1, Yukako Kato1, Hironori Yoshioka1, Hitoshi Umezawa1, Hiromitsu Kato1, Masahiko Ogura1, Daisuke Takeuchi1, Yoshiyuki Miyamoto1, Toshiharu Makino1 (1.AIST, 2.Kanazawa Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-7]Effect of post-annealing on nano-plate diamond prepared by narrow gap microwave plasma CVD

〇Rurii Higuchi1, Yuma Sakai1, Tatsuya Ichikawa1, Hiroaki kakiuchi1, Hiromasa Ohmi1 (1.Osaka Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-8]Imparting Conductivity to Diamond Powder with Nitrogen-doped Conductive Nanodiamond Coating by Coaxial Arc Plasma Deposition and Its Applications

〇(M2C)Akinao Watanabe1, Itsuki Misono1, Hiroshi Naragino1, Hidenobu Shiroishi2, Tsuyoshi Yoshitake1 (1.IGSES, Kyushu Univ., 2.NIT, Tokyo Coll.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-9]Use of Boron-doped Diamond Films as Reference Electrode in High-temperature Electrochemical Measurements

〇Seidai Inokuchi1, Masafumi Inaba1, Shinya Ohmagari2, Hiroshi Naragino1, Michihiko Nakano1, Junya Suehiro1 (1.Kyushu Univ., 2.AIST)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-10]Plasma Treatment-driven Wettability Control of Nanodiamond Films for Application to Titanium Medical Implants

〇Yamato Ikiyama1, Hiroshi Naragino1, Itsuki Misono1, Lining Lou1, A.Z. Ahmed1, Satoshi Takeichi2, Tsuyoshi Yoshitake1 (1.IGSES Kyushu Univ., 2.NIT Sasebo College)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)English Presentation

[8p-N321-11]Developing nickel-catalyzed graphene/diamond heterostructures for MEMS applications

〇(P)Guo Chen1, Wen Zhao1, Zhaozong Zhang1, Satoshi KOIZUMI1, Meiyong Liao1 (1.NIMS)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-N321-12]Stress in homoepitaxial diamond films grown by HFCVD

〇Kimiyoshi Ichikawa1, Kazuki Kobayashi1, Tsubasa Matsumoto1, Kan Hayashi1, Takao Inokuma1, Satoshi Yamasaki1, Norio Tokuda1 (1.Kanazawa Univ.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[8p-N321-13]Comparison of cathodoluminescence of phosphorus-doped n-type diamond films with different hydrogen concentrations

〇Yuki Katamune1,2, Satoshi Inoshita1,2, Akira Izumi2, Tokuyuki Teraji1, Kenji Watanabe1, Satoshi Koizumi1 (1.NIMS, 2.Kyutech)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-14]Evaluation of electron mobility in phosphorus-doped diamond synthesized with tert-butylphosphine

〇Hiromu Nakagawa1, Riku Kawase1, Hiroyuki Kawashima1, Naoya Morioka1,4, Hiromitsu Kato2, Norio Tokuda3, Satoshi Yamasaki3, Masahiko Ogura2, Toshiharu Makino2, Norikazu Mizuochi1,4 (1.Kyoto Univ., 2.AIST, 3.Kanazawa Univ., 4.CSRN)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[8p-N321-15]Crystallinity and Electrical Properties of Heavily B-doped Diamond Depending on Substrate Temperatures

〇Yasushi Hoshino1, Kaiya Imamura1, Yuhei Seki1,2 (1.Kanagawa Univ., 2.Hokkaido Univ.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[8p-N321-16]Formation of Low-Resistance Layer by High-Concentration N Ion Implantation into Diamond

〇(M2)Kaiya Imamura1, Yuhei Seki1,2, Yasushi Hoshino1 (1.Kanagawa Univ., 2.Hokkaido Univ.)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[8p-N321-17]Fabrication of diamond MOS structure using SiO2/Al2O3 bilayer thin film (3)

〇(M1C)Taichi Saito1, Ryuichi Nakagawa1, Tsubasa Yoshimoto1, Tsubasa Matsumoto2, Norio Tokuda2, Takeshi Kawae1 (1.Kanazawa Univ, 2.NanoMaRi. Kanazawa Univ)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-18]Improvement of blocking voltage in vertical-type 2DHG diamond MOSFETs by nitrogen doped layer

〇(D)Ryo Yoshida1,2, Nobutaka Oi1, Akihiko Watanabe3, Ichiro Omura3, Kenji Ueda2, Hiroshi Kawarada1, Tatsuya Fujishima1 (1.Power Diamond Systems, 2.Waseda Univ., 3.Kyushu Inst. Tech.)
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[8p-N321-19]Tunnel transport in Py/Al2O3/p-type diamond MOS structures

〇Makoto Kawano1, Ian Park1, Yoshitaka Taniyasu1, Kazuyuki Hirama1 (1.NTT BRL)
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