[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-N322-9] Thermal transportation analysis of GaN channel layer in N-polar GaN HEMT using universal machine learning interatomic potential

〇Shigeki Yoshida¹, Takuji Yamamura¹, Junji Kotani¹, Kozo Makiyama¹, Ken Nakata¹ (1.SEI)

Keywords:

GaN,Thermal conductivity,machine learning interatomic potential