[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization | The 86th JSAP Autumn Meeting 2025

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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[8p-N322-1~17]13.7 Compound and power devices, process technology and characterization

Mon. Sep 8, 2025 1:30 PM - 6:30 PM JST
Mon. Sep 8, 2025 4:30 AM - 9:30 AM UTC

N322 (Lecture Hall North)

1:30 PM - 2:15 PM JST(4:30 AM - 5:15 AM UTC)English Presentation

[8p-N322-1][Fellow International 2025 Special Lecture] Unlocking the Potential of GaN Power Integration

〇Kevin Jing Chen¹ (1.The Hong Kong University of Science and Technology)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-N322-2]Method of ringing noise reduction for GaN-HEMT switching circuits

〇Toshihide Ide¹, Takahiro Gotow¹, Ryosaku Kaji¹, Katsumi Furuya¹, Hisashi Yamada¹ (1.AIST)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-3]Temperature-dependence of barrier height in AlN SBDs obtained by I-V and C-V

〇Issei Sasaki¹, Masanobu Hiroki², Kazuhide Kumakura², Kazuyuki Hirama², Yoshitaka Taniyasu², Takuya Maeda¹ (1.UTokyo, 2.NTT-BRL)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N322-4]Comparison between experimental and device simulation data for Low-frequency Y₂₁ and Y₂₂ signals in GaN HEMTs

〇Toshiyuki Oishi¹, Shiori Takada¹, Ken Kudara², Yutaro Yamaguchi², Shintaro Shinjo², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[8p-N322-5]Contactless-photoelectrochemical (CL-PEC) Etching of AlGaN/GaN Heterostructures and its self-stopping phenomenon

〇Naoki Shiozawa¹, Tokachi Katsumata¹, Haruki Okano¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-6]Evaluation of a surface conductive layer on etched u-GaN by C-V characteristics for charge balance evaluation of polarization superjunction GaN FETs

〇(D)Eito Kokubo¹, Hirotaka Watanabe², Manato Deki³, Atsushi Tanaka², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D center Nagoya Univ., 4.IAR Nagoya Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-N322-7]High-Temperature Electrical Characterization of Mg-Doped AlN Layers

〇(M2)Fuga Miyazawa¹, Hironori Okumura¹, Masataka Imura² (1.Tsukuba Univ, 2.NIMS)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[8p-N322-8]Suppression of the gate leakage current in N-polar GaN-channel HEMTs on Al₂O₃

〇Yuki Yoshiya¹, Takuya Hoshi¹, Taro Sasaki¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-N322-9]Thermal transportation analysis of GaN channel layer in N-polar GaN HEMT using universal machine learning interatomic potential

〇Shigeki Yoshida¹, Takuji Yamamura¹, Junji Kotani¹, Kozo Makiyama¹, Ken Nakata¹ (1.SEI)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[8p-N322-10]Suppression of current collapse in N-polar GaN HEMTs with recessed gate structures

〇Akihiro Hayasaka¹, Shigeki Yoshida¹, Junya Yaita¹, Akira Mukai¹, Junji Kotani¹, Kozo Makiyama¹, Ken Nakata¹ (1.Sumitomo Electric)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-N322-11]Impact on Drain Current Transient in N-polar GaN HEMTs

〇Junya Yaita¹, Shigeki Yoshida¹, Akihiro Hayasaka¹, Akira Mukai¹, Yuki Imazeki¹, Junji Kotani¹, Kozo Makiyama¹, Ken Nakata¹ (1.Sumitomo Electric)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-16]Effect of AlN interlayer in AlGaN/GaN heterostructures on both the reduction of strain-induced defects in GaN channel and the improvement of two-dimensional carrier transport

〇Masatomo Sumiya¹, Yoshitaka Nakano², Yasutaka Imanaka¹ (1.NIMS, 2.Chubu Univ.)

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[8p-N322-17]Effects of indium on the gate leakage current in an InAlGaN HEMT

〇Atsushi Yamada¹, Toshihiro Ohki¹ (1.Fujitsu Ltd.)

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The 86th JSAP Autumn Meeting 2025

Session Details

[8p-N322-1~17]13.7 Compound and power devices, process technology and characterization

[8p-N322-1][Fellow International 2025 Special Lecture] Unlocking the Potential of GaN Power Integration

[8p-N322-2]Method of ringing noise reduction for GaN-HEMT switching circuits

[8p-N322-3]Temperature-dependence of barrier height in AlN SBDs obtained by I-V and C-V

[8p-N322-4]Comparison between experimental and device simulation data for Low-frequency Y₂₁ and Y₂₂ signals in GaN HEMTs

[8p-N322-5]Contactless-photoelectrochemical (CL-PEC) Etching of AlGaN/GaN Heterostructures and its self-stopping phenomenon

[8p-N322-6]Evaluation of a surface conductive layer on etched u-GaN by C-V characteristics for charge balance evaluation of polarization superjunction GaN FETs

[8p-N322-7]High-Temperature Electrical Characterization of Mg-Doped AlN Layers

[8p-N322-8]Suppression of the gate leakage current in N-polar GaN-channel HEMTs on Al₂O₃

[8p-N322-9]Thermal transportation analysis of GaN channel layer in N-polar GaN HEMT using universal machine learning interatomic potential

[8p-N322-10]Suppression of current collapse in N-polar GaN HEMTs with recessed gate structures

[8p-N322-11]Impact on Drain Current Transient in N-polar GaN HEMTs

[8p-N322-12]Shubnikov-de Haas Oscillation of 2DEG in ScAlN/AlGaN/AlN/GaN Heterostructure

[8p-N322-13]Transport Property of 2DEG in ScAlN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

[8p-N322-14]Electrical characterization of ScAlN thin film grown on GaN/sapphire substrate

[8p-N322-15]Modeling and analysis of fully-recessed Ohmic contact resistances to AlGaN/GaN heterostructures

[8p-N322-16]Effect of AlN interlayer in AlGaN/GaN heterostructures on both the reduction of strain-induced defects in GaN channel and the improvement of two-dimensional carrier transport

[8p-N322-17]Effects of indium on the gate leakage current in an InAlGaN HEMT

Session Details

[8p-N322-1~17]13.7 Compound and power devices, process technology and characterization

[8p-N322-1][Fellow International 2025 Special Lecture] Unlocking the Potential of GaN Power Integration

[8p-N322-2]Method of ringing noise reduction for GaN-HEMT switching circuits

[8p-N322-3]Temperature-dependence of barrier height in AlN SBDs obtained by I-V and C-V

[8p-N322-4]Comparison between experimental and device simulation data for Low-frequency Y21 and Y22 signals in GaN HEMTs

[8p-N322-5]Contactless-photoelectrochemical (CL-PEC) Etching of AlGaN/GaN Heterostructures and its self-stopping phenomenon

[8p-N322-6]Evaluation of a surface conductive layer on etched u-GaN by C-V characteristics for charge balance evaluation of polarization superjunction GaN FETs

[8p-N322-7]High-Temperature Electrical Characterization of Mg-Doped AlN Layers

[8p-N322-8]Suppression of the gate leakage current in N-polar GaN-channel HEMTs on Al2O3

[8p-N322-9]Thermal transportation analysis of GaN channel layer in N-polar GaN HEMT using universal machine learning interatomic potential

[8p-N322-10]Suppression of current collapse in N-polar GaN HEMTs with recessed gate structures

[8p-N322-11]Impact on Drain Current Transient in N-polar GaN HEMTs

[8p-N322-12]Shubnikov-de Haas Oscillation of 2DEG in ScAlN/AlGaN/AlN/GaN Heterostructure

[8p-N322-13]Transport Property of 2DEG in ScAlN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

[8p-N322-14]Electrical characterization of ScAlN thin film grown on GaN/sapphire substrate

[8p-N322-15]Modeling and analysis of fully-recessed Ohmic contact resistances to AlGaN/GaN heterostructures

[8p-N322-16]Effect of AlN interlayer in AlGaN/GaN heterostructures on both the reduction of strain-induced defects in GaN channel and the improvement of two-dimensional carrier transport

[8p-N322-17]Effects of indium on the gate leakage current in an InAlGaN HEMT

[8p-N322-4]Comparison between experimental and device simulation data for Low-frequency Y₂₁ and Y₂₂ signals in GaN HEMTs

[8p-N322-8]Suppression of the gate leakage current in N-polar GaN-channel HEMTs on Al₂O₃