[8p-N401-1~12] 15.5 Group IV crystals and alloys

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N401-4] Formation of compositionally uniform Ge_0.5Sn_0.5 epitaxial layer and observation of resonance Raman effect

〇Kaito Shibata¹, Shigehisa Shibayama¹, Ryo Yokogawa^2,3, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,4 (1.Nagoya Univ., 2.RISE, 3.Hiroshima Univ., 4.IMaSS)

Keywords:

GeSn,epitaxial growth,GaSb