The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[8p-N401-1~12]15.5 Group IV crystals and alloys

Mon. Sep 8, 2025 2:00 PM - 5:00 PM JST
Mon. Sep 8, 2025 5:00 AM - 8:00 AM UTC
N401 (Lecture Hall North)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-N401-1]Formation of high-quality epitaxial Ge layer on Si(111) substrate by sputtering method

〇Taichi Okuda1, Akio Ohta2, Ryo Yokogawa3,4, Masashi Kurosawa1, Mitsuo Sakashita1, Osamu Nakatsuka1,5, Shigehisa Shibayama1 (1.Nagoya Univ., 2.Fukuoka Univ., 3.RISE, 4.Hiroshima Univ., 5.IMaSS)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-N401-2]Sputtering heteroepitaxy of Ge1−xSnx layers with high Sn content on Si(001) substrates

〇Kousaku Goto1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS Nagoya Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N401-3]Epitaxial Growth of GeSn Thin Films on Si via Nanochannel Sputtering through Ultra-Thin Oxide

〇Kensho Ishimaru1, Masahiro Hara1, Takuma Kobayahsi1, Takayoshi Shimura1,2, Heiji Watanabe1 (1.UOsaka, 2.Waseda Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N401-4]Formation of compositionally uniform Ge0.5Sn0.5 epitaxial layer and observation of resonance Raman effect

〇Kaito Shibata1, Shigehisa Shibayama1, Ryo Yokogawa2,3, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,4 (1.Nagoya Univ., 2.RISE, 3.Hiroshima Univ., 4.IMaSS)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[8p-N401-5]Consideration on atomic arrangement of epitaxial Ge0.5Sn0.5 by spatial correlation model

〇Ryo Yokogawa1,2, Kaito Shibata3, Shigehisa Shibayama3, Mitsuo Sakashita3, Masashi Kurosawa3, Osamu Nakatsuka3,4 (1.RISE, Hiroshima Univ., 2.Grad. Sch. of Eng., Hiroshima Univ., 3.Grad. Sch. of Eng., Nagoya Univ., 4.IMaSS, Nagoya Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[8p-N401-6]Structural evaluation of GaGeSb alloys for light-emitting device applications

〇(M1C)Tomo Horota1, Haruto Koto1, Yasuhiko Ishikawa1, Keisuke Yamane1 (1.Toyohasi Tech)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-N401-7]Examination of Method for Evaluating Critical Thickness of SiGe/Si(110) Structures

〇Koji Usuda1, Kiu Inami2,4, Naoto Kumagai2,3, Tloshifumi Irisawa2,3, Atsushi Ogura1,4 (1.Meiji Univ., MREL, 2.AIST, SFRC, 3.LSTC, 4.Meiji Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N401-8]Anisotropy Analysis of SiGe Thin Film Grown on Si (110) Off-Angle Substrates by Chemical Vapor Deposition

〇(M1)Kiu Inami1,2, Koji Usuda3, Naoto Kumagai1,4, Toshifumi Irisawa1,4, Atsushi Ogura2,3 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL, 4.LSTC)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N401-9]Strain Evaluation of Surface Roughness Effect in SiGe Epi. Thin Films on (110)Si Sub. by Raman Spectroscopy

〇Yuta Ito1,2, Kiu Inami1,3, Koji Usuda4, Atsushi Ogura1,4 (1.Meiji Univ., 2.JSPS Research Fellow, 3.AIST, 4.MREL)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-N401-10]Epitaxial growth and strain engineering of Si1−xSnx films on Si1−yGey buffer layers

〇Sosei Ito1, Masashi Kurosawa1, Wei-Chen Wen2, Yuji Yamamoto2, Shigehisa Shibayama1, Mitsuo Sakashita1, Osamu Nakatsuka1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IHP - Leibniz Institute for High Performance Microelectronics, 3.IMaSS, Nagoya Univ.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[8p-N401-11]Evaluation of strain distribution around cracks formed on strained SiGe/Ge

〇Ryota Mizoguchi1, Keitaro Kato1, Shibahara Yuka1, Aikawa Mayu1, Michihiro Yamada1, Kohei Hamaya2,3,4, Kentarou Sawano1 (1.Tokyo City Univ., 2.Grad. Sch. Eng. Sci., The Univ. of Osaka., 3.CSRN, The Univ. of Osaka., 4.OTRI, The Univ. of Osaka.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-N401-12]Effect of Si capping layer on lattice strain of Ge wire structures on Si

〇(M1)Soki Matsushita1, Jose A. Piedra-Lorenzana1, Takeshi Hizawa1, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech.)
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