[8p-N403-1~15] CS.1 Code-sharing Session of 2.3&7.4

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-N403-5] Application of ion beam induced chemical vapor deposition for the formation of germanium doxide, tin dioxide, silicon dioxide, and silicon carbide films

〇Satoru Yoshimura¹ (1.Osaka Univ.)

Keywords:

silicon carbide,germanium dioxide,tin dioxide

I would like to talk about our attempts for the formation of germanium oxide, tin oxide, silicon oxide, and silicon carbide films using the ion beam induced CVD method. For example, the film formation of germanium oxide was carried out using the following procedure: hexamethyldigermane was vaporized and sprayed onto the substrate at a flow rate of 0.7 sccm. Upon irradiating with an oxygen ion beam, it was confirmed that a film had formed on the substrate. The film was analyzed by XPS, FTIR, and XRR, confirming that it was germanium dioxide.