[8p-N404-1~16] 11.1 Fundamental properties

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-N404-8] Strain Effects on the Electronic State in the Bilayer Nickelate Thin Film of
La_3-xPr_xNi₂O_7-δ

〇Kota Morita¹, Hirotaka Okabe², Jumpei G. Nakamura², Hideki Kuwahara¹, Ryosuke Kadono², Tadashi Adachi¹ (1.Sophia Univ., 2.KEK-IMSS)

Keywords:

Bilayer nickelate,Strain effect,Pulsed laser deposition

To investigate the relationship between strain and physical properties in La_3-xPr_xNi₂O_7-δ, which exhibits superconductivity under an in-plane compressive strain of approximately 2%, we fabricated thin films of La_3-xPr_xNi₂O_7-δ (x = 0) on LaAlO₃ (LAO, ε ~ +1.2 %) and (LaAlO₃)_0.3-(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT, ε ~ -1 %) substrates using pulsed laser deposition (PLD). Electrical resistivity measurements revealed a semiconducting behavior on LSAT (tensile strain), whereas metallic behavior was observed on LAO (compressive strain). These results suggest that the in-plane compressive strain imposed by the substrate enhances electrical conductivity. This indicates that in-plane compressive strain may play a role equivalent to hydrostatic pressure in bulk samples.