Presentation Information
[8p-P03-4]Al2O3film deposition by ALD on fluorinated graphene using SAM film for realization of ultra-thin charge trap layer
〇Kohei Mashimo1, Yoshiharu Kirihara1, Ryoichi Kawai1, Ko Namikawa1, Tappei Nishihara2, Yuichiro Mitani1, Ryosuke Ishikawa1, Hiroshi Nohira1 (1.Tokyo City Univ., 2.JASRI)
Keywords:
graphene,SAM film,ALD
When fluorination treatment is applied to graphene (Gr), a two-dimensional layered material, it changes from a conductive film to an insulating film. This property has been utilized to propose and demonstrate the performance of non-volatile memory using fluorinated graphene (FGr) as a charge capture layer. However, since FGr lacks dangling bonds, the non-uniformity of Al2O3 films deposited by atomic layer deposition (ALD) has become an issue. Recently, it has been revealed that forming a monolayer of Tetracyanoquinodimethane (TCNQ) on Gr enables the deposition of a uniform ALD-Al2O3 film. Therefore, we hypothesized that applying a TCNQ monolayer on FGr could enable the deposition of a uniform ALD-Al2O3 film. In this study, we fabricated MOS structure devices to reproduce the operation of non-volatile memory using FGr as a charge capture layer, and performed the following measurements: (1) surface roughness evaluation using atomic force microscopy (AFM), (2) operational verification using C-V measurements, and (3) operando measurements using voltage-applied HAXPES.