Session Details
[8p-P03-1~4]13.3 Insulator technology
Mon. Sep 8, 2025 1:30 PM - 3:30 PM JST
Mon. Sep 8, 2025 4:30 AM - 6:30 AM UTC
Mon. Sep 8, 2025 4:30 AM - 6:30 AM UTC
P03 (Gymnasium)
[8p-P03-1]Breaking energy of hydrogen bonds in SiNx and SiOx films
〇Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)
[8p-P03-2]Impact of Interface Trap Density Distribution near Conduction Band Edge on C-V Characteristics of Si MOS Capacitor
〇Koei Matsubara1, Shoma Kato1, Hinata Suzuki1, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1.Aichi Inst. Tech., 2.Nagoya Univ.)
[8p-P03-3]Electrical Prorerties of Hf-oxide Layer on Si Substrate Formed by Post Oxidation
〇Riku Kayagi1, Kito Sakou1, Naoya Takasu1, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1.Aichi Inst.Tech, 2.Nagoya Univ)
[8p-P03-4]Al2O3film deposition by ALD on fluorinated graphene using SAM film for realization of ultra-thin charge trap layer
〇Kohei Mashimo1, Yoshiharu Kirihara1, Ryoichi Kawai1, Ko Namikawa1, Tappei Nishihara2, Yuichiro Mitani1, Ryosuke Ishikawa1, Hiroshi Nohira1 (1.Tokyo City Univ., 2.JASRI)