[8p-P04-1~9] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[8p-P04-4] Optoelectronic Properties of Si-doped InAs In-Plane Ultrahigh Density Quantum Dots

〇Yoshihiro Naruko¹, Toshiyuki Kaizu^2,1, Naoya Miyashita^1,2, Kouichi Yamaguchi^1,2 (1.Dep. of Eng. Sci Univ. of Electro-Comm., 2.QFCD2 center Univ. of Electro-Comm.)

Keywords:

MBE,quantum dot,Photoluminescence