Session Details

[8p-P04-1~9]13.6 Nanostructures, quantum phenomena, and nano quantum devices

Mon. Sep 8, 2025 1:30 PM - 3:30 PM JST
Mon. Sep 8, 2025 4:30 AM - 6:30 AM UTC
P04 (Gymnasium)

[8p-P04-1]Effect of electron coupling energy level on circularly polarized luminescence properties of InGaAs quantum dots tunnel-coupled with a GaNAs quantum well

〇Yuma Suzuki1, Hiroto Kise2, Ayano Morita2, Junichi Takayama2, Akihiro Murayama2, Satoshi Hiura2 (1.Hokkaido Univ., 2.IST, Hokkaido Univ.)

[8p-P04-2]Spin-optic modeling of InAs/GaAs QDs assembled by Stacked SML growth

〇Ronel Intal Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)

[8p-P04-3]Transition Model of Strong Coupling of In-Plane Ultrahigh-Density Quantum Dots (2)

〇Ryoga Kai1, Toshiyuki Kaizu2,1, Naoya Miyashita1,2, Koichi Yamaguchi1,2 (1.Dep. of Eng. Sci Univ. of Electro-Comm., 2.QFCD2 center Univ. of Electro-Comm.)

[8p-P04-4]Optoelectronic Properties of Si-doped InAs In-Plane Ultrahigh Density Quantum Dots

〇Yoshihiro Naruko1, Toshiyuki Kaizu2,1, Naoya Miyashita1,2, Kouichi Yamaguchi1,2 (1.Dep. of Eng. Sci Univ. of Electro-Comm., 2.QFCD2 center Univ. of Electro-Comm.)

[8p-P04-5]Room temperature negative differential resistance characteristics of n-type Si/CaF2 double-barrier Resonant Tunneling Diode with CaF2 embedded structure

〇Takahiro Kobayashi1, Ryoya Usami1, Kanta Murakami1, Ken Hattori1, Masahiro Watanabe1 (1.Science Tokyo)

[8p-P04-7]Generation of telecom-band photons from Yb-doped fiber

〇(M2)Mana Takeda1, Kazuma Kageyama1, Shinnosuke Katabami1, Ruki Tunoda1, Hideki Gotoh2, Takehiko Tawara1 (1.Nihon Univ., 2.Hiroshima Univ.)

[8p-P04-8]Spectroscopic physics in polyaromatic amine-ligated CsPbI3 quantum dots

〇(M1)Shunsuke Nakanishi1, Takashi Sagawa1 (1.Graduate School of Energy Sci., Kyoto Univ.)

[8p-P04-9]Synthesis and luminescence characterization of composite nanoparticles

〇Daiki Suetsugu1, Yamamoto Shin-ichi1 (1.Ryukoku Univ.)