Presentation Information
[8p-P04-6]Room temperature negative differential resistance of Si/CaF2 n-type double-barrier resonant tunnel diodes grown in SiO2 holes formed using reactive ion etching
〇Shu Igari1, Takahiro Kobayashi1, Ken Hattori1, Masahiro Watanabe1 (1.Science Tokyo)
Keywords:
quantum effect device,resonant tunneling diode
Si/CaF2 heterostructures can be epitaxially grown on Si substrates due to similar crystal structures and close lattice constants, and have a 1-2 eV conduction band discontinuity at the interface. Previous studies have demonstrated MA/cm2-class current densities and high PVCR RTDs at room temperature. Conventional hydrofluoric acid wet etching has a pore control issue, and high-precision reactive ion etching is important for miniaturization. In this study, reactive ion etching was applied for forming micropores, which are crystal growth regions, to form Si/CaF2 DBRTDs, and micropore fabrication and IV properties were evaluated.