Presentation Information
[8p-P05-2]Simultaneous scanning technology and inline inspection of photoluminescence for III-V compound semiconductor multi-junction solar cells
〇Shoichi Furukawa1, Yusuke Oteki2, Naoya Miyashita3, Yoshitaka Okada2 (1.Takano, 2.RCAST, Univ. of Tokyo, 3.The Univ. of Electro-Communications)
Keywords:
II-V compound semiconductor,multi-junction solar cells,Photoluminescence
We investigated optical methods and image processing techniques for imaging and simultaneous scanning of photoluminescence (PL) generated in the subcells of III-V compound semiconductor multijunction solar cells. In the PL imaging evaluation of the subcells, we confirmed that exponential brightness changes occur with respect to the irradiance of the excitation light. This is thought to be a phenomenon caused by the pn junction, but since it is difficult to directly obtain the electrical characteristics, we would like to discuss the validity of this as an analytical method.