[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-P10-24] Change in conduction type of NiO films by thermal annealing

〇Harunobu Yasuda¹, Takayuki Akiba¹, Hironobu Miyamoto², Kohei Sasaki², Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Novel Crystal)

Keywords:

Wide band gap semiconductor,Beta-gallium oxide,NiO thin film

In this study, NiO thin films deposited by RF magnetron sputtering with O₂ ratios from 50 to 100% were annealed at 100 to 400°C, and focused on the change of electric properties. By decreasing O₂ ratio and annealing temperatures above 300°C, the room temperature resistivity increased depended on the decreasing Ni composition. At annealing temperatures above 300°C, the conductivity type changed from p-type to n-type. The involvement of Ni⁰ defects of donor-type is suggested.