Presentation Information
[8p-P10-45]Dependence of Electrical Characteristics on the Thickness of the Resistive Switching Layer in Ga-Sn-O Memristors
〇Ryusei Hagihara1, Tokiyoshi Matsuda1,2, Hidenori Kawanishi2, Mutsumi Kimura2,3 (1.Kindai Univ., 2.IMPR Center, 3.Ryukoku Univ.)
Keywords:
oxide semicondctor,memristor,Ga-Sn-O
Ga-Sn-O (GTO) is a transparent oxide semiconductor, and thin films tailored to the characteristics of various devices, such as thin-film transistors (TFTs) and memristors, have been adopted .
A memristor is formed by sandwiching a semiconductor thin film between upper and lower metal electrodes. When a voltage is applied across the electrodes, the resistance of the sandwiched semiconductor thin film changes. This resistance change is believed to be caused by the diffusion of oxygen ions and oxygen vacancies within the device.
However, the ON/OFF characteristics of GTO memristors still have room for improvement.
In this study, we propose a hypothesis that increasing the thickness of the GTO layer will increase the number of oxygen ions and oxygen vacancies in the resistive switching layer, thereby improving the memristor characteristics. We report on the thickness dependence of the memristor's electrical properties.
A memristor is formed by sandwiching a semiconductor thin film between upper and lower metal electrodes. When a voltage is applied across the electrodes, the resistance of the sandwiched semiconductor thin film changes. This resistance change is believed to be caused by the diffusion of oxygen ions and oxygen vacancies within the device.
However, the ON/OFF characteristics of GTO memristors still have room for improvement.
In this study, we propose a hypothesis that increasing the thickness of the GTO layer will increase the number of oxygen ions and oxygen vacancies in the resistive switching layer, thereby improving the memristor characteristics. We report on the thickness dependence of the memristor's electrical properties.