[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-P10-9] Rock salt Ni_1-xZn_xO thin films grown by sol-gel method

〇Takashi Yasuda¹, Ryuto Miyakoshi¹, Shinji Nakagomi¹ (1.ISU)

Keywords:

NiO,ZnO,sol-gel method

Ni_1-xZn_xO thin films were grown by sol-gel method. Zn contents x dependence of Lattice constant and Bandgap Energy were obtained up to x=0.4 as follows;
d=4.17+0.09X [angstrom]
Eg=1.65x²-0.32x+3.79 [eV]