[8p-S301-1~7] Control of surface and interface reactions/growth for functional materials

3:10 PM - 3:40 PM JST(6:10 AM - 6:40 AM UTC)

[8p-S301-4] Three-Dimensional Self-Ordered Group IV 3D Nanodot Fabrication by Strain and Surface Morphology Control

〇Yuji Yamamoto^1,2, Wen Wei-Chen¹, Tillack Bernd^1,3 (1.IHP-Leibniz Institut fuer innovative Mikroelektronik, 2.Nagoya University, 3.Technische Universitaet Berlin)

Keywords:

Nanodot,SiGe,Epitaxy

Recent developments in the manufacturing process of group IV semiconductors is enabling fabrication of artificial emerging materials with new physical properties, such as nanodots (NDs) and superlattices (SLs), and these materials can be applied to existing CMOS technology to create new functional devices. When group IV NDs are formed on Si, they are usually distributed randomly because the ND growth starts from nucleation phase. Although it is possible to form periodic structures using photolithography, it is difficult to achieve high density. Here, we review the results of self-aligning fabrication of SiGe NDs with three-dimensional periodic structures using CVD by controlling the strain and surface morphology, and discuss the formation mechanism.