[9a-N201-1~10] 6.1 Ferroelectric thin films

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N201-4] Growth of ferroelectric thin films under atmospheric pressure below 100 ºC and their characterization

〇Satsuki Koga¹, Yuxian Hu¹, Takahisa Shiraishi², Kazuki Okamoto¹, Hiroshi Funakubo¹ (1.Science Tokyo, 2.Kumamoto Univ.)

Keywords:

ferroelectric,thin film,low-temperature deposition

We successfully fabricated PbTiO₃(100)-oriented epitaxial films under atmospheric pressure and 40°C using powder raw materials and strong alkaline solutions as starting materials. Compared to conventional synthesis methods, this method is extremely simple and enables synthesis at atmospheric pressure and low temperatures. However, the details of the film formation process remain unclear. In this study, we investigated the film formation process in greater detail and examined the mechanisms that enable low-temperature film formation.